Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate

Author： Song J.S.   Seo S.H.   Oh M.H.   Chang J.H.   Cho M.W.   Yao T.  

Publisher： Elsevier

ISSN： 0022-0248

Source： Journal of Crystal Growth, Vol.261, Iss.1, 2004-01, pp. : 159-163

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