Related content

The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

By Grudowski P.   Holmes A.   Eiting C.   Dupuis R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 257-261

Springer Publishing Company

Access to resources Recommend Favorite

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

By Kim Sun   Seo Young   Nahm Kee   Hahn Yun   Shim Hyun   Suh Eun-Kyung   Lim Kee   Lee Hyung  

Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. : 970-974

Springer Publishing Company

Access to resources Recommend Favorite

Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces

By Marega E.   Oliveira R.M.   Ade Souza C.   Arakaki H.   Gonzalez-Borrero P.P.  

Microelectronics, Vol. 35, Iss. 1, 2004-01 ,pp. : 41-43

Elsevier

Access to resources Recommend Favorite

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

By Hwang C.   Schurman M.   Mayo W.   Lu Y.   Stall R.   Salagaj T.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 243-251

Springer Publishing Company

Access to resources Recommend Favorite

Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

By Qin Z.X.   Chen Z.Z.   Zhang H.X.   Ding X.M.   Hu X.D.   Yu T.J.   Tong Y.Z.   Zhang G.Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 6, 2002-12 ,pp. : 473-475

Elsevier

Access to resources Recommend Favorite