Related content

2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates

By Jankovic N.D.   O'Neill A.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 225-230

Elsevier

Access to resources Recommend Favorite

Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements

By Belyakov A.   Moryashin A.   Perov M.   Yakimov A.   Vandamme L.  

Radiophysics and Quantum Electronics, Vol. 48, Iss. 3, 2005-03 ,pp. : 240-245

Springer Publishing Company

Access to resources Recommend Favorite

The total dose effects on the 1/f noise of deep submicron CMOS transistors

By Rongbin Hu   Yuxin Wang   Wu Lu  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24006-24011

IOP Publishing

Access to resources Recommend Favorite

High-frequency noise analysis of Si/SiGe heterojunction bipolar transistors

By Herzel Frank   Heinemann Bernd  

International Journal of Electronics, Vol. 81, Iss. 1, 1996-07 ,pp. : 37-48

Taylor & Francis Ltd

Access to resources Recommend Favorite

Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub

By Roy Sukhendu Deb   Kumar M. Jagadesh  

Microelectronics International, Vol. 22, Iss. 1, 2005-04 ,pp. : 3-9

Emerald Group Publishing Ltd

Access to resources Recommend Favorite