Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode

Author： Mishra J.K. Dash G.N. Pattanaik S.R. Mishra I.P.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.3, 2004-03, pp. : 401-408

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Computer simulation of series resistance of an SDR silicon IMPATT diode in the X band

By De Pankaj

International Journal of Electronics, Vol. 81, Iss. 5, 1996-11 ,pp. : 545-550

Taylor & Francis Ltd

Access to resources Recommend Favorite

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

By Pradhan J. Pattanaik S. R. Swain S. K. Dash G. N.

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34006-34011

IOP Publishing

Access to resources Recommend Favorite

Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

By Acharyya Aritra Banerjee Suranjana Banerjee J. P.

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34005-34015

IOP Publishing

Access to resources Recommend Favorite

Absorption properties of GaAsBi based p–i–n heterojunction diodes

By Mendes Danuta F Richards Robert D Bastiman Faebian Zhou Zhize Mendes Danuta F

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94004-94009

IOP Publishing

Access to resources Recommend Favorite

An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p⁺ adjusting region

By Cailin Wang Lei Zhang

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 44006-44010

IOP Publishing

Access to resources Recommend Favorite