Determination of film and surface recombination in thin-film SOI devices using gated-diode technique

Author： Rudenko T. Rudenko A. Kilchytska V. Cristoloveanu S. Ernst T. Colinge J.-P. Dessard V. Flandre D.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.3, 2004-03, pp. : 389-399

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devices

By He Jin Zhang Xing Wang Yangyuan

International Journal of Electronics, Vol. 89, Iss. 2, 2002-02 ,pp. : 111-122

Taylor & Francis Ltd

Access to resources Recommend Favorite

Processing and Thermoelectric Performance Characterization of Thin-Film Devices Consisting of Electrodeposited Bismuth Telluride and Antimony Telluride Thin-Film Legs

By Kim Min-Young

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 759-764

Springer Publishing Company

Access to resources Recommend Favorite

Development of ZnTe layers using an electrochemical technique for applications in thin-film solar cells

By Fauzi F. Diso D.G. Echendu O.K. Patel V. Purandare Y. Burton R. Dharmadasa I.M.

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45005-45014

IOP Publishing

Access to resources Recommend Favorite

Design of thin-film tape heads

By Ruigrok J.J.M. Draaisma E.A. van Kesteren H.W.

Philips Journal of Research, Vol. 51, Iss. 1, 1998-01 ,pp. : 21-57

Elsevier

Access to resources Recommend Favorite