In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

By Cao Z.  

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 393-398

Springer Publishing Company

Access to resources Recommend Favorite

Crystallization of amorphous Si 0.5 Ge 0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

By Edelman F.   Raz T.   Komem Y.   Zaumseil P.   Osten H. -J.   Capitan M.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 79, Iss. 11, 1999-11 ,pp. : 2617-2628

Taylor & Francis Ltd

Access to resources Recommend Favorite

Low-temperature conduction and electron interaction in amorphous Si–Ge films

By Ochiai Yuichi  

Philosophical Magazine B, Vol. 81, Iss. 9, 2001-09 ,pp. : 1083-1091

Taylor & Francis Ltd

Access to resources Recommend Favorite

Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

By Olivares J.   Martn P.   Rodrguez A.   Sangrador J.   Jimenez J.   Rodrguez T.  

Thin Solid Films, Vol. 358, Iss. 1, 2000-01 ,pp. : 56-61

Elsevier

Access to resources Recommend Favorite

Temperature- and electron-beam-induced crystallization of zirconia thin films deposited from an aqueous medium: a transmission electron microscopy study

By Roddatis V. V.   Su D. S.   Jentoft F. C.   Schlögl R.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 82, Iss. 15, 2002-10 ,pp. : 2825-2839

Taylor & Francis Ltd

Access to resources Recommend Favorite