Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

By Fatemi M.   Thompson P.E.   Twigg M.E.   Chaudhuri J.  

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 362-371

Elsevier

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Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method

By Stepikhova M.V.   Andreev B.A.   Shmagin V.B.   Krasil'nik Z.F.   Kuznetsov V.P.   Shengurov V.G.   Svetlov S.P.   Jantsch W.   Palmetshofer L.   Ellmer H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 426-430

Elsevier

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Role of hydrogen during Si capping of strained Ge or Si 1-x Ge x hut clusters

By Dentel D.   Bischoff J.L.   Kubler L.   Bolmont D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 49-52

Elsevier

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 17-20

Elsevier

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