X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

By Qu B.   Zheng X.H.   Wang Y.T.   Feng Z.H.   Liu S.A.   Lin S.M.   Yang H.   Liang J.W.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 29-33

Elsevier

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Characterization of ZnSe films grown on GaAs substrates with In x Ga l-x As and Al x Ga 1-x As buffer layers

By Luyo-Alvarado J.   Santana-Aranda M.A.   Melendez-Lira M.   Lopez-Lopez M.   Mendez V.H.   Vidal M.A.   Yonezu H.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 37-40

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Structural characterization of semi-strained layer (GaAs) 1-x (Si 2 ) x /GaAs multilayers grown by magnetron sputtering

By Rosendo E.   Rodrguez A.G.   Navarro-Contreras H.   Vidal M.A.   Asomoza R.   Kudriavtsev Y.  

Thin Solid Films, Vol. 416, Iss. 1, 2002-09 ,pp. : 49-53

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Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100)

By Mendez-Garca V.H.   Perez-Centeno A.   Lopez-Lopez M.  

Thin Solid Films, Vol. 433, Iss. 1, 2003-06 ,pp. : 63-67

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Ultrahigh vacuum atomic layer epitaxy of Cd 1-x Mn x Te layers grown on ZnTe/GaAs (100) substrates: Reflection mass spectrometry studies

By Sadowski J.T.   Herman M.A.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 266-270

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