On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiO x N y films

By Alayo M.I.   Pereyra I.   Scopel W.L.   Fantini M.C.A.  

Thin Solid Films, Vol. 402, Iss. 1, 2002-01 ,pp. : 154-161

Elsevier

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Structural properties of a-Si 1-x N x :H films grown by plasma enhanced chemical vapour deposition by SiH 4 + NH 3 + H 2 gas mixtures

By Pirri C.F.   Giorgis F.   Tresso E.  

Thin Solid Films, Vol. 307, Iss. 1, 1997-10 ,pp. : 298-305

Elsevier

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Thick SiO x N y and SiO 2 films obtained by PECVD technique at low temperatures

By Alayo M.I.   Pereyra I.   Carreno M.N.P.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 40-45

Elsevier

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High rate deposition of a-Si:H and a-SiN x :H by VHF PECVD

By Takagi T.   Takechi K.   Nakagawa Y.   Watabe Y.   Nishida S.  

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 751-755

Elsevier

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Preparation of B-doped a-Si 1-x C x :H films and heterojunction p-i-n solar cells by the Cat-CVD method

By Chikusa K.   Takemoto K.   Itoh T.   Yoshida N.   Nonomura S.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 245-248

Elsevier

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