Growth, selectivity and adhesion of CVD-deposited copper from Cu +1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

Author： Webb J.B. Northcott D. Emesh I.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.270, Iss.1, 1995-12, pp. : 483-488

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of the pressure on the chemical vapor deposition of copper from copper hexafluoroacetylacetonate trimethylvinylsilane

By Lee W.-J. Rha S.-K. Lee S.-Y. Park C.-O. Kim D.-W.

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 254-258

Elsevier

Access to resources Recommend Favorite

Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane

By Son J.-H. Park M.-Y. Rhee S.-W.

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 229-236

Elsevier

Access to resources Recommend Favorite

Effects of hydrogen plasma pretreatment on characteristics of copper film deposited by remote plasma CVD using (hfac)Cu(TMVS)

By Lee J.-H. Lee J.-H. Hwang K.-J. Kim J.-Y. Suk C.-G. Choi S.-Y.

Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. : 132-136

Elsevier

Access to resources Recommend Favorite

(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film

By Kang S.-W. Han S.-H. Rhee S.-W.

Thin Solid Films, Vol. 350, Iss. 1, 1999-08 ,pp. : 10-13

Elsevier

Access to resources Recommend Favorite

Carrier-gas effects on characteristics of copper chemical vapor deposition using hexafluoro-acetylacetonate-copper (1) trimethylvinylsilane

By Awaya N. Arita Y.

Thin Solid Films, Vol. 262, Iss. 1, 1995-06 ,pp. : 12-19

Elsevier

Access to resources Recommend Favorite