Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

Author: Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.279, Iss.1, 1996-06, pp. : 11-13

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Abstract