Some characteristics of silicon-doped In 0.52 Al 0.48 As grown lattice-matched on InP substrates by molecular beam epitaxy

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Elsevier

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Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

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Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 233-237

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Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si 2 H 6 and PH 3

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 230-232

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InP based photonic crystal microlasers on silicon wafer

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Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 475-476

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Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

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