Interpretation of spectroscopic ellipsometry measurements of ultrathin dielectric layers on silicon: Impact of accuracy of the silicon optical constants

Author： Tonova D.   Depas M.   Vanhellemont J.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.288, Iss.1, 1996-11, pp. : 64-68

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of the formation conditions on the microstructure of porous silicon layers studied by spectroscopic ellipsometry

By Rossow U.   Frotscher U.   Thonissen M.   Berger M.G.   Frohnhoff S.   Munder H.   Richter W.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 5-8

Elsevier

Access to resources Recommend Favorite

Spectroscopic ellipsometry on silicon-oxide films on silicon

By Jungk G.   Grabolla T.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 253-257

Elsevier

Access to resources Recommend Favorite

Spectroscopic ellipsometry study of amorphous silicon anodically oxidised

By Aguas H.   Goncalves A.   Pereira L.   Silva R.   Fortunato E.   Martins R.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 345-349

Elsevier

Access to resources Recommend Favorite

Characterization of different porous silicon structures by spectroscopic ellipsometry

By Fried M.   Lohner T.   Polgar O.   Petrik P.   Vazsonyi E.   Barsony I.   Piel J.P.   Stehle J.L.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 223-227

Elsevier

Access to resources Recommend Favorite

In situ measurements of ultrathin silicon oxide dissolution rates

By Chopra D.   Suni I.I.  

Thin Solid Films, Vol. 323, Iss. 1, 1998-06 ,pp. : 170-173

Elsevier

Access to resources Recommend Favorite