Author: De Berranger E. Bodnar S. Chantre A. Regolini J.L. Mouis M. Kirtsch J. Monroy A. Granier A. Laurens M.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 250-253
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Recent advances with SiGe heterojunction bipolar transistors
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
By Knoll D. Heinemann B. Ehwald K.-E. Tillack B. Schley P. Osten H.J.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
AN ultra‐wideband SiGe BiCMOS LNA for W‐band applications
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 6, 2015-06 ,pp. :
SiGe - heterostructures for CMOS technology
Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. :