Comparison of SiGe and SiGe:C heterojunction bipolar transistors

By Knoll D.   Heinemann B.   Ehwald K.-E.   Tillack B.   Schley P.   Osten H.J.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 342-346

Elsevier

Access to resources Recommend Favorite

Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

By De Berranger E.   Bodnar S.   Chantre A.   Regolini J.L.   Mouis M.   Kirtsch J.   Monroy A.   Granier A.   Laurens M.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 250-253

Elsevier

Access to resources Recommend Favorite

Characterization of Si/SiGe heterojunction bipolar transistors by deep level transient spectroscopy

By De Barros O.   Souifi A.   Le Tron B.   Vincent G.   Bremond G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 271-273

Elsevier

Access to resources Recommend Favorite

Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

By Zhang J.   Jin X.   Tsien P.-H.   Lo T.-C.  

Thin Solid Films, Vol. 333, Iss. 1, 1998-11 ,pp. : 13-15

Elsevier

Access to resources Recommend Favorite

A review of radiation effects in heterojunction bipolar transistors

By Weaver B. D.  

Radiation Effects and Defects in Solids, Vol. 160, Iss. 9, 2005-09 ,pp. : 425-430

Taylor & Francis Ltd

Access to resources Recommend Favorite