Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method

By Stepikhova M.V.   Andreev B.A.   Shmagin V.B.   Krasil'nik Z.F.   Kuznetsov V.P.   Shengurov V.G.   Svetlov S.P.   Jantsch W.   Palmetshofer L.   Ellmer H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 426-430

Elsevier

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 17-20

Elsevier

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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

By Fatemi M.   Thompson P.E.   Twigg M.E.   Chaudhuri J.  

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 362-371

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Alternatives to thick MBE-grown relaxed SiGe buffers

By Hackbarth T.   Herzog H.-J.   Zeuner M.   Hock G.   Fitzgerald E.A.   Bulsara M.   Rosenblad C.   von Kanel H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 148-151

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