Photoluminescence in UHV-CVD-grown Si 1-x Ge x quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

Author： Rowell N.L. Aers G.C. Lafontaine H. Williams R.L.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.321, Iss.1, 1998-05, pp. : 158-162

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