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Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities

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Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

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Optical and structural properties of Si/SiGe wires grown on patterned Si substrates

By Zhuang Y.   Daniel A.   Schelling C.   Schaffler F.   Bauer G.   Grenzer J.   Senz S.  

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

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