Author： Guo T. Chen L.Y. Brown D. Besser P. Voss S. Mosely R.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.332, Iss.1, 1998-11, pp. : 319-324
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Low parasitic resistance contacts for scaled ULSI devices
Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. :
Access to resources
Recommend
Gold metallization for aluminum nitride
By Shalish I. Gasser S.M. Kolawa E. Nicolet M.-A. Ruiz R.P.
Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. :
Electroless CoMoB Diffusion Barrier Layer for ULSI-Cu Metallization
Materials Science Forum, Vol. 2016, Iss. 847, 2016-04 ,pp. :
Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization
Materials Science Forum, Vol. 2014, Iss. 809, 2015-02 ,pp. :
Low Temperature Effect in Electrical Properties of Sintered Copper-Nickel-Aluminum Alloys
Materials Science Forum, Vol. 2014, Iss. 805, 2015-01 ,pp. :