Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

By Monte A.F.G.   da Silva S.W.   Cruz J.M.R.   Morais P.C.   Chaves A.S.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 169-171

Elsevier

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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

By Kim J.S.   Oh D.K.   Yu P.W.   Leem J.Y.   Lee J.I.   Lee C.-R.  

Journal of Crystal Growth, Vol. 261, Iss. 1, 2004-01 ,pp. : 38-43

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Some characteristics of silicon-doped In 0.52 Al 0.48 As grown lattice-matched on InP substrates by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 284-287

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Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

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Dynamics of surface phase separation on patterned substrates by molecular beam epitaxy

By Enomoto Y.  

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