Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

By Joo S.-J.   Yoon E.   Hwang S.-H.   Whang K.-W.   Chun S.K.   Dong Kim Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 111-115

Elsevier

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Study of surface roughening of tensily strained Si 1-x-y Ge x C y films grown by ultra high vacuum-chemical vapor deposition

By Calmes C.   Bouchier D.   Debarre D.   Le Thanh V.   Clerc C.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 150-155

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Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas

By Jin G.   Liu J.L.   Luo Y.H.   Wang K.L.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 169-172

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Formation of coherent Ge shallow dome islands on Si(001) by ultra-high-vacuum ion beam sputter deposition

By Chung Hung-Chin  

Applied Physics A, Vol. 91, Iss. 2, 2008-05 ,pp. : 267-271

Springer Publishing Company

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Selective ultrathin gold deposition by organometallic chemical vapor deposition onto organic self-assembled monolayers (SAMs)

By Wohlfart P.   Wei  

Thin Solid Films, Vol. 340, Iss. 1, 1999-02 ,pp. : 274-279

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