The role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films

Author： Wei C.H.   Edgar J.H.   Ignatiev C.   Chaudhuri J.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.360, Iss.1, 2000-02, pp. : 34-38

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