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Elsevier

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Optical characterization of thermally oxidized Si 1-x-y Ge x C y layers

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Hole mobilities in pseudomorphic Si 1-x-y Ge x C y alloy layers

By Duschl R.   Seeberger H.   Eberl K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 336-339

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Effective mass measurement in two-dimensional hole gas in strained Si 1-x-y Ge x C y / Si(100) modulation doped heterostructures

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Carbon and germanium distributions in Si 1-x-y Ge x C y layers epitaxially grown on Si(001) by RTCVD

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