Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

Author: Sugii N.   Nakagawa K.   Yamaguchi S.   Park S.K.   Miyao M.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 362-365

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Abstract