Strain-driven modification of the Ge/Si growth mode in stacked layers: a way to produce Ge islands having equal size in all layers

Author： Le Thanh V. Yam V. Boucaud P. Zheng Y. Bouchier D.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 43-48

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