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Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition

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Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

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High mobility -SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate

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