Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa

By Regelman D.V.   Magidson V.   Beserman R.   Dettmer K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 73-75

Elsevier

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Morphology and photoluminescence of Ge islands grown on Si(001)

By Goryll M.   Vescan L.   Luth H.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 244-247

Elsevier

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

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Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates

By Jin G.   Liu J.L.   Luo Y.H.   Wang K.L.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 49-54

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Strain and misfit dislocation density in finite lateral size Si 1-x Ge x films grown by selective epitaxy

By Hollander B.   Vescan L.   Mesters S.   Wickenhauser S.  

Thin Solid Films, Vol. 292, Iss. 1, 1997-01 ,pp. : 213-217

Elsevier

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