Low temperature (=< 600 o C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

By Pichon L.   Raoult F.   Mourgues K.   Kis-Sion K.   Mohammed-Brahim T.   Bonnaud O.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 133-136

Elsevier

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A new method for the determination of the channel length reduction in polysilicon thin film transistors (TFTs)

By Farmakis F.V.   Brini J.   Kamarinos G.   Mathieu N.   Dimitriadis C.A.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 105-108

Elsevier

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Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

By Foglietti V.   Mariucci L.   Fortunato G.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 196-199

Elsevier

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Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors

By Gueorguiev V.   Ivanov T.   Andreev S.   Popova L.  

Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. : 1203-1205

Elsevier

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Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs)

By Farmakis F.V.   Tsamados D.M.   Brini J.   Kamarinos G.   Dimitriadis C.A.   Miyasaka M.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 151-153

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