Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

By Fonrodona M.   Gordijn A.   van Veen M.K.   van der Werf C.H.M.   Bertomeu J.   Andreu J.   Schropp R.E.I.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 145-148

Elsevier

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Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD

By Soler D.   Fonrodona M.   Voz C.   Asensi J.M.   Bertomeu J.   Andreu J.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 157-160

Elsevier

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Preparation of B-doped a-Si 1-x C x :H films and heterojunction p-i-n solar cells by the Cat-CVD method

By Chikusa K.   Takemoto K.   Itoh T.   Yoshida N.   Nonomura S.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 245-248

Elsevier

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Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVD

By Liu F.   Zhu M.   Feng Y.   Han Y.   Liu J.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 97-100

Elsevier

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The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon ( c-Si:H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique

By Jadkar S.R.   Sali J.V.   Takwale M.G.   Musale D.V.   Kshirsagar S.T.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 206-212

Elsevier

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