Formation of low-resistivity poly-Si and SiN x films by Cat-CVD for ULSI application

By Morimoto R.   Yokomori C.   Kikkawa A.   Izumi A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 230-235

Elsevier

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Thin film poly-Si formation by Cat-CVD method and its application for solar cells

By Niira K.   Senta H.   Hakuma H.   Komoda M.   Okui H.   Fukui K.   Arimune H.   Shirasawa K.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 315-319

Elsevier

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Characterization of Cat-CVD grown Si-C and Si-C-O dielectric films for ULSI applications

By Takatsuji K.   Kawakami M.   Makita Y.   Murakami K.   Nakayama H.   Miura Y.   Shimoyama N.   Machida H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 116-119

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Deposition chemistry in the Cat-CVD processes of the SiH 4 /NH 3 system

By Umemoto H.   Morimoto T.   Yamawaki M.   Masuda Y.   Masuda A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 24-27

Elsevier

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Preparation of poly-Si films by Cat-CVD for thin film transistor

By Sunayama H.   Yamada K.   Karasawa M.   Ishibashi K.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 226-229

Elsevier

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