The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

By Kim H.-Y.   Lee K.-Y.   Lee J.-Y.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 17-24

Elsevier

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Large-grain polycrystalline silicon thin films obtained by low-temperature stepwise annealing of hydrogenated amorphous silicon

By Dytlewski N.   Ruther R.   Livingstone J.  

Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. : 67-74

Elsevier

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Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

By Shim K.-H.   Kim H.-S.   Lee J.-Y.   Kang J.-Y.   Song M.K.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 185-188

Elsevier

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Hydrogenated amorphous silicon films prepared at low substrate temperature on a cathode of an asymmetric r.f. plasma CVD system

By Seth T.   Dixit P.N.   Mukherjee C.   Anandan C.   Bhattacharyya R.  

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 11-17

Elsevier

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An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity'

By Mahan A. H.   Beyer W.   Williamson D. L.   Yang J.   Guha S.  

Philosophical Magazine Letters, Vol. 80, Iss. 9, 2000-08 ,pp. : 647-652

Taylor & Francis Ltd

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