Improvement of the SiO 2 /Si interface characteristics by two-step deposition with intermediate plasma treatment using N 2 /He or O 2 /He gas

Author: Yi C.   Kim H.U.   Rhee S.W.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.408, Iss.1, 2002-04, pp. : 252-259

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Abstract