Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films

By Aarik J.   Sundqvist J.   Aidla A.   Lu J.   Sajavaara T.   Kukli K.   Harsta A.  

Thin Solid Films, Vol. 418, Iss. 2, 2002-10 ,pp. : 69-72

Elsevier

Access to resources Recommend Favorite

Properties of tantalum oxide thin films grown by atomic layer deposition

By Kukli K.   Aarik J.   Aidla A.   Kohan O.   Uustare T.   Sammelselg V.  

Thin Solid Films, Vol. 260, Iss. 2, 1995-05 ,pp. : 135-142

Elsevier

Access to resources Recommend Favorite

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon

By Kukli K.   Ritala M.   Uustare T.   Aarik J.   Forsgren K.   Sajavaara T.   Leskela M.   Harsta A.  

Thin Solid Films, Vol. 410, Iss. 1, 2002-05 ,pp. : 53-60

Elsevier

Access to resources Recommend Favorite

Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors

By Hausmann D.M.   de Rouffignac P.   Smith A.   Gordon R.   Monsma D.  

Thin Solid Films, Vol. 443, Iss. 1, 2003-10 ,pp. : 1-4

Elsevier

Access to resources Recommend Favorite

Effects of in‐situ molecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 2, 2015-02 ,pp. : 323-328

John Wiley & Sons Inc

Access to resources Recommend Favorite