The role of PI interlayer deposited by ionized cluster beam on the electroluminescence efficiency

Author： Cho S.J. Park D.K. Kwon T.W. Yoo D.S. Kim I.G.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.417, Iss.1, 2002-09, pp. : 175-179

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Raman characteristics of hard carbon-nitride films deposited by reactive ionized cluster beam techniques

By Zou X.R. Lu H.W. Xie J.Q. Feng J.Y.

Thin Solid Films, Vol. 345, Iss. 2, 1999-05 ,pp. : 208-211

Elsevier

Access to resources Recommend Favorite

The effective density of induced interface states of ionized cluster beam deposited Ag/n-Si Schottky junctions

By Cvikl B. Korosak D.

Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 355-359

Elsevier

Access to resources Recommend Favorite

The microscopic model of Fermi level pinning in ionized cluster beam deposited Ag/n-Si Schottky structures

By Korosak D. Cvikl B.

Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 349-353

Elsevier

Access to resources Recommend Favorite

Cu films deposited by a partially ionized beam (PIB)

By Koh S.-K. Choi W.-K. Kim K.-H. Jung H.-J.

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 266-270

Elsevier

Access to resources Recommend Favorite

Growth of ZnTe films by ionized cluster beam epitaxy at low temperature

By Feng J.Y. Zheng Y. Zhang F.W. Fan Y.D.

Thin Solid Films, Vol. 274, Iss. 1, 1996-03 ,pp. : 46-49

Elsevier

Access to resources Recommend Favorite