Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Author： Perera R.   Ikeda A.   Hattori R.   Kuroki Y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.423, Iss.2, 2003-01, pp. : 212-217

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