Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111)

Author： Schwarzkopf J.   Selle B.   Schmidbauer M.   Fuhs W.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.427, Iss.1, 2003-03, pp. : 274-278

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

By Ishikawa T.   Okumura H.   Akane T.   Sano M.   Giraud S.   Nakabayashi Y.   Matsumoto S.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 232-235

Elsevier

Access to resources Recommend Favorite

Low temperature epitaxial growth of Si and Si 1-y C y films by hot wire cell method

By Watahiki T.   Abe K.   Tamura H.   Miyajima S.   Yamada A.   Konagai M.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 221-224

Elsevier

Access to resources Recommend Favorite

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

By Koulmann J.J.   Chelly R.   Angot T.   Louis P.   Bolmont D.   Werckmann J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

Elsevier

Access to resources Recommend Favorite

Epitaxial growth and thermal stability of thin Pd 2 Si films on (001), (011) and (111) Si

By Chen J.F.   Chen L.J.  

Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 107-114

Elsevier

Access to resources Recommend Favorite

Manganese fluoride epitaxial growth on Si(111)

By Anisimov O.V.   Banshchikov A.G.   Krupin A.V.   Moisseeva M.M.   Sokolov N.S.   Ulin V.P.   Yakovlev N.L.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 199-202

Elsevier

Access to resources Recommend Favorite