Author： Graf U. Meier J. Kroll U. Bailat J. Droz C. Vallat-Sauvain E. Shah A.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.427, Iss.1, 2003-03, pp. : 37-40
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
The high-density microwave plasma for high rate deposition of microcrystalline silicon
By Shirai H. Sakuma Y. Ueyama H.
Thin Solid Films, Vol. 345, Iss. 1, 1999-05 ,pp. :
Access to resources
Recommend
Properties of high growth rate amorphous silicon deposited by MC-RF-PECVD
By Lavareda G. Nunes de Carvalho C. Amaral A. Conde J.P. Vieira M. Chu V.
Vacuum, Vol. 64, Iss. 3, 2002-01 ,pp. :
Microcrystalline silicon for solar cells deposited at high rates by hot-wire CVD
By Iwaniczko E. Xu Y. Schropp R.E.I. Mahan A.H.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :