Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

By Lohner T.   Petrik P.   Polgar O.   Khanh N.Q.   Fried M.   Gyulai J.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 487-490

Elsevier

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Characterization of near surface region of plasma immersion ion-implanted silicon using Rutherford backscattering spectrometry, transmission electron microscopy and spectroscopic ellipsometry

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Influence of the formation conditions on the microstructure of porous silicon layers studied by spectroscopic ellipsometry

By Rossow U.   Frotscher U.   Thonissen M.   Berger M.G.   Frohnhoff S.   Munder H.   Richter W.  

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Annealing effects on silicon-rich oxide films studied by spectroscopic ellipsometry

By Spiga S.   Tallarida G.   Borghesi A.   Sassella A.   De Santi G.  

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Investigation of different oxidation processes for porous silicon studied by spectroscopic ellipsometry

By Frotscher U.   Rossow U.   Ebert M.   Pietryga C.   Richter W.   Munder H.   Arens-Fischer R.   Berger M.G.  

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