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From amorphous to microcrystalline silicon deposition in SiF 4 -H 2 -He plasmas: in situ control by optical emission spectroscopy

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Electrical characteristics of Al/a-C:H/n-Si diodes using CH 4 and CH 4 /CF 4 as the gas source

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IR characterization of a-C:H:N films sputtered in Ar/CH 4 /N 2 plasma

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