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Inorganic Materials, Vol. 46, Iss. 7, 2010-07 ,pp. : 693-702

MAIK Nauka/Interperiodica

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Structure and properties of metal nitride films produced by ion implantation

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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

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Silicon Heterojunction Solar Cells Using AlO_x and Plasma-Immersion Ion Implantation

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Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen

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