Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures

Author: Re Na Yun S.   Sub Park W.   Ha Lee B.   Tae Park J.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1477-1482

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Abstract