Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Author: Pey K.L.   Tung C.H.   Radhakrishnan M.K.   Tang L.J.   Sun Y.   Wang X.D.   Lin W.H.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1471-1476

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