Gate oxide breakdown characterization on 0.13 m CMOS technology

Author: Faure D.   Bru D.   Ali C.   Giret C.   Christensen K.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1519-1523

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Abstract