Strain-dependent intersubband absorption in the valence band of SiGe quantum wells

By Yakimov A I   Kirienko V V   Armbrister V A   Bloshkin A A  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45008-45012

IOP Publishing

Access to resources Recommend Favorite

Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

By Isa F   Pezzoli F   Isella G   Meduňa M   Falub C V   Müller E   Kreiliger T   Taboada A G   von Känel H   Miglio Leo  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105001-105009

IOP Publishing

Access to resources Recommend Favorite

High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT's

By Kuchenbecker J.   Borgarino M.   Zeuner M.   Konig U.   Plana R.   Fantini F.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1719-1723

Elsevier

Access to resources Recommend Favorite

Ge/Si heterostructures with coherent Ge quantum dots in silicon for applications in nanoelectronics

By Pchelyakov O P   Dvurechensky A V   Latyshev A V   Aseev A L  

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14027-14030

IOP Publishing

Access to resources Recommend Favorite

Quantum study of ultra-thin-base SiGe heterojunction bipolar transistor

By Li Yao   Xu Juyan   Kong Deyi   Wei Tongli  

International Journal of Electronics, Vol. 88, Iss. 11, 2001-11 ,pp. : 1141-1150

Taylor & Francis Ltd

Access to resources Recommend Favorite