Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

By Wang Q.-Y.   Wang J.-H.   Deng H.-F.   Lin L.-Y.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 333-339

Elsevier

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Defects properties in plastically deformed silicon studied by positron lifetime measurements

By Wang Z.   Leipner H.S.   Krause-Rehberg R.   Bodarenko V.   Gu H.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 358-366

Elsevier

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Crystallization and disappearance of defects of the annealed silicon nanowires

By Niu J.   Sha J.   Wang Y.   Ma X.   Yang D.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 65-69

Elsevier

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Influence of contamination on the electrical activity of crystal defects in silicon

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Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 281-288

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Optical anisotropy in dislocation-free silicon single crystals

By Chu T.   Yamada M.   Donecker J.   Rossberg M.   Alex V.   Riemann H.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 327-332

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