Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

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Semiconductor Science and Technology, Vol. 29, Iss. 5, 2014-05 ,pp. : 55008-55014

IOP Publishing

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Investigation of oxygen precipitation and intrinsic gettering in heavily Sb-doped silicon

By Liu C.   Hao Q.   Sun W.   Wang H.   Xu Y.  

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Dependence of crystal nature on the gettering efficiency of iron and nickel in a Czochralski silicon wafer

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Gettering by helium implantation applied to a device: impact of metal and dopant segregation

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Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs

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