Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Author： Šimukovič A. Matulionis A. Liberis J. Šermukšnis E. Sakalas P. Zhang F. Leach J.H. Avrutin V. Morkoç H.

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.5, 2013-05, pp. : 55008-55012

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