Inductively Coupled Plasma Etch Damage in 4H-SiC Investigated by Schottky Diode Characterization

Author： Danielsson E.   Lee S.-K.   Zetterling C.-M.   Östling M.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 247-252

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