Schottky-ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?

By La Via F.   Roccaforte F.   Raineri V.   Mauceri M.   Ruggiero A.   Musumeci P.   Calcagno L.   Castaldini A.   Cavallini A.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 519-523

Elsevier

Access to resources Recommend Favorite

The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC

By Laariedh F.   Lazar M.   Cremillieu P.   Penuelas J.   Leclercq J-L   Planson D.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45007-45012

IOP Publishing

Access to resources Recommend Favorite

Refractory metal boride ohmic contacts to P-type 6H-SiC

By Oder T.   Williams J.   Mohney S.   Crofton J.  

Journal of Electronic Materials, Vol. 27, Iss. 1, 1998-12 ,pp. : 14-18

Springer Publishing Company

Access to resources Recommend Favorite

High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

By Oder T.   Williams J.   Bozack M.   Iyer V.   Mohney S.   Crofton J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 324-329

Springer Publishing Company

Access to resources Recommend Favorite

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

By Daves Walter  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1990-1997

Springer Publishing Company

Access to resources Recommend Favorite