Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

By Fang Z.-Q.  

Journal of Electronic Materials, Vol. 40, Iss. 11, 2011-11 ,pp. : 2179-2186

Springer Publishing Company

Access to resources Recommend Favorite

CMOS image sensors for sensor networks

By Culurciello Eugenio  

Analog Integrated Circuits and Signal Processing, Vol. 49, Iss. 1, 2006-10 ,pp. : 39-51

Springer Publishing Company

Access to resources Recommend Favorite

Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

By Duenas S.   Castan H.   Barbolla J.   Kukli K.   Ritala M.   Leskela M.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1623-1629

Elsevier

Access to resources Recommend Favorite

Experimental Results on BIC Sensors for Transient Current Testing

By Picos R.   Roca M.   Isern E.   Segura J.   García-Moreno E.  

Journal of Electronic Testing, Vol. 16, Iss. 3, 2000-06 ,pp. : 235-241

Springer Publishing Company

Access to resources Recommend Favorite

Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

By Kamiura Y.   Iwagami Y.   Fukuda K.   Yamashita Y.   Ishiyama T.   Tokuda Y.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 352-357

Elsevier

Access to resources Recommend Favorite